 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY LA112B/H.DBK DATA SHEET DOC. NO : REV. DATE : : QW0905-LA 112B/H.DBK B 17 - Jan - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA112B/H.DBK Page 1/5 Package Dimensions 4.3 2.5O 0.5 8.2 H 5.0 2.9 9.6 DBK 2.65 1/4 0.5 TYP 2.54TYP 3.2O 0.3 4.45O 0.5 6.99O 0.5 + - LH2640-1 LDBK2640 2.9 3.1 3.3 4.3 1.5MAX 25.0MIN 0.5 TYP 1.0MIN 2.54TYP Note : 1.All dimension are in millimeter tolerance is O 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA112B/H.DBK Page 2/5 Absolute Maximum Ratings at Ta=25 J Ratings Parameter Symbol DBK Forward Current Peak Forward Current Duty 1/10@10KHz Power Dissipation Reverse Current @5V Electrostatic Discharge Operating Temperature Storage Temperature Soldering Temperature IF IFP PD Ir ESD Topr Tstg Tsol 30 100 120 50 150 -20 ~ +80 -30 ~ +100 Max 260J for 5 sec Max (2mm from body) H 15 60 40 10 ----mA mA mW UNIT g A V J J Typical Electrical & Optical Characteristics (Ta=25 J ) Forward Peak Spectral voltage wave halfwidth length f nm @20mA(V) f Pnm Viewing angle @ 10 mA(mcd) 2c 1/2 (deg) Luminous intensity PART NO MATERIAL COLOR Emitted Lens Red Diffused Min. Max. Min. 697 90 1.7 2.6 1.8 Typ. 4.2 50 GaP Red LA112B/H.DBK MATERIAL COLOR Emitted Lens Blue Diffused Forward Dominant Spectral voltage Wave halfwidth Length f nm @20mA(V) f Dnm Viewing angle @ 20 mA(mcd) 2c 1/2 (deg) Luminous intensity Typ. Max. Min. 470 30 3.5 4.0 220 Typ. 450 38 InGaN/GaN Blue Note : 1.The forward voltage data did not including O 0.1V testing tolerance. 2. The luminous intensity data did not including O 15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA112B/H.DBK Page3/5 Typical Electro-Optical Characteristics Curve H CHIP Fig.1 Forward current vs. Forward Voltage 1000 Fig.2 Relative Intensity vs. Forward Current 3.0 Forward Current(mA) 100 10 1.0 0.1 1.0 2.0 3.0 4.0 5.0 Relative Intensity Normalize @20mA 2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Relative Intensity@20mA Normalize @25J Forward Voltage@20mA Normalize @25J 1.2 Ambient Temperature(J ) Ambient Temperature(J ) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 1.0 0.5 0.0 600 700 800 900 1000 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA112B/H.DBK Page 4/5 Typical Electro-Optical Characteristics Curve DBK CHIP Fig.1 Forward current vs. Forward Voltage 1000 Fig.2 Relative Intensity vs. Forward Current 3.0 Forward Current(mA) 100 10 1 01 1.0 2.0 3.0 4.0 5.0 Relative Intensity Normalize @20mA 2.5 2.0 1.5 1.0 0.5 0.0 1 10 100 1000 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25J Forward Voltage@20mA Normalize @25J 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 Ambient Temperature(J ) Ambient Temperature(J ) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 1.0 0.5 0.0 400 450 500 550 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA112B/H.DBK Page 5/5 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) Description This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 JO 5J 2.t=1000 hrs (-24hrs, +72hrs) MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 JO 5J 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. JIS C 7021: B-12 High Temperature High Humidity Test 1.Ta=65JO 5J 2.RH=90 %~95% 3.t=240hrs O 2hrs The purpose of this test is the resistance of the device under tropical for hous. MIL-STD-202:103B JIS C 7021: B-11 Thermal Shock Test 1.Ta=105 JO 5J &-40JO (10min) (10min) 2.total 10 cycles 5J The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. This test intended to see soldering well performed or not. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 JO 5J 2.Dwell time= 10 O 1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Solderability Test 1.T.Sol=230 JO 5J 2.Dwell time=5 O 1sec |
Price & Availability of LA112B-HDBK
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |